ingaas pin photodiode array g8909-01 photodiode array for dwdm monitor www.hamamatsu.com 1 low crosstalk precise chip position tolerance: 0.05 mm the g8909-01 may be damaged by electro static discharge, etc. be carefull when using the g8909-01. dwdm monitor with awg 250 m pitch, 40 ch parallel readout features applications electrical and optical characteristics (ta=25 c, per 1 element) structure absolute maximum ratings parameter value unit photosensitive area 0.08 mm pixel pitch 250 m number of elements 40 ch parameter symbol value unit reverse voltage v r max 6 v incident light level pin 10 mw operating temperature topr -40 to +85 * c storage temperature tstg -40 to +85 * c * in n 2 environment or in vacuum note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. parameter symbol condition min. typ. max. unit spectral response range - 0.9 to 1.7 - m photosensitivity s =1.31 m 0.8 0.9 - a/w =1.55 m 0.85 0.95 - photoresponse nonuniformity prnu - - 5 % dark current i d v r =5 v - 0.02 0.2 na shunt resistance rsh v r =10 mv - 8 - g terminal capacitance ct v r =5 v, f=1 mhz - 1.4 - pf crosstalk - v r =0.1 v - -33 - db
ingaas pin photodiode array g8909-01 2 spectral response terminal capacitance vs. reverse voltage dark current vs. ambient temperature dark current vs. reverse voltage wavelength (m) photosensitivity (a/w) 2.0 0.5 (typ. ta=25 c) 0.8 1.0 1.2 1.4 1.6 1.8 1 0.6 reverse voltage (v) terminal capacitance 0.01 0.1 1 100 ff 1 pf 100 (typ. ta=25 c, f=1 mhz) 10 pf 10 ambient temperature (c) dark current 20 30 50 10 pa 1 na 80 (typ. v r =5 v) 100 na 100 pa 10 na 70 40 60 reverse voltage (v) dark current 0.01 0.1 1 1 pa 10 pa 100 pa 100 (typ. ta=25 c) 1 na 10 kirdb0002eb kirdb0267ea kirdb0268ea kirdb0266ea
cat. no. kird1053e03 feb. 2012 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: thorshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8- 509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 china: hamamatsu photonics (china) co., ltd.: 1201 tower b, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. before assembly into fi nal products, please contact us for the delivery specification sheet to check the latest information. t ype numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. t he product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of february, 2012. ingaas pin photodiode array g8909-01 3 crosstalk characteristic dimensional outline (unit: mm) position x (m) relative sensitivity (%) -250 -200 -100 0.01 1 0 (typ. ta=25 c, qipuptfotjujwf bsfb light spot x 2.5 2.0 10.5 2.1 22.0 0.8 0.5 anode pad (pitch: 400 m, 40 ch, 150 150 m bond pads) a (0.1) cathode pad * the center of the photosensitive area to the bottom of the substrate detail a 0.80 (0.15) 0.70 0.05 * 0.4 kirdb0269eb kirda0158ea
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